Temperature dependent optical properties of amorphous silicon for diode laser crystallization

control of the optical properties of nanoparticles by laser fields

در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...

Optical properties of hydrogenated amorphous silicon

Temperature Dependent Optical Properties of Silicon Quantum Dot/polymer Nanocomposites

..................................................................................................iii ACKNOWLEDGEMENTS..................................................................................iv LIST OF FIGURES...........................................................................................vii CHAPTER

Temperature dependence of optical properties for amorphous silicon at wavelengths of 632.8 and 752 nm.

The temperature dependence of the optical properties for amorphous silicon is studied at wavelengths of 632.8 and 752 nm. Both the refractive index and extinction coefficient increase linearly with temperature for 752 nm, while the refractive index decreases and the extinction coefficient increases for 632.8 nm. The rate of increase of the extinction coefficient at 632.8 nm is twice as much as ...

Polarization-dependent laser crystallization of Se-containing amorphous chalcogenide films

We report about the observation of influence of the light polarization on the photocrystallization process in the Se Ag I , elementary Se and Se Te films. Irradiation with linearly polarized He–Ne and Arq laser light results in the 70 15 15 80 20 Ž . formation of polycrystalline films with strong optical anisotropy dichroism , the sign of which is determined by the direction of the electrical v...